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  1 CGHV1J070D 70 w, 18.0 ghz, gan hemt die crees CGHV1J070D is a high voltage gallium nitride (gan) high electron mobility transistor (hemt) on a silicon carbide substrate, using a 0.25 m gate length fabrication process. this gan-on-sic product offers superior high frequency, high effciency features. it is ideal for a variety of applications operating from 10 mhz to 18 ghz at 40 v with a high breakdown voltage. features ? 17 db typ. small signal gain at 10 ghz ? 60% typ. pae at 10 ghz ? 70 w typical psat ? 40 v operation ? up to 18ghz operation applications ? satellite communications ? ptp communications links ? marine radar ? pleasure craft radar ? port vessel traffc services ? broadband amplifers ? high effciency amplifers packaging information ? bare die are shipped in gel-pak? containers or on tape. ? non-adhesive tacky membrane immobilizes die during shipment. rev 0.5 C august 2014 pn: CGHV1J070D subject to change without notice. www.cree.com/rf
2 absolute maximum ratings (not simultaneous) parameter symbol rating units conditions drain-source voltage v dss 100 volts 25?c gate-source voltage v gs -10, +2 volts 25?c storage temperature t stg -65, +150 ?c operating junction temperature t j 225 ?c maximum forward gate current i gmax 14.4 ma 25?c maximum drain current 1 i dmax 6.0 a 25?c thermal resistance, junction to case (packaged) 2 r jc 1.8 ?c/w 85?c thermal resistance, junction to case (die only) 2 r jc 1.1 ?c/w 85?c mounting temperature t s 320 ?c 30 seconds note 1 current limit for long term reliable operation. note 2 eutectic die attach using 80/20 ausn mounted to a 60 mil thick cmc carrier. electrical characteristics (frequency = 10 ghz unless otherwise stated; t c = 25?c) characteristics symbol min. typ. max. units conditions dc characteristics gate threshold voltage v (gs)th -3.8 -3.0 C2.3 v v ds = 10 v, i d = 14.4 ma gate quiescent voltage v (gs)q C -2.7 C vdc v dd = 40 v, i dq = 720 ma saturated drain current 1 i sat 11.5 13.0 C a v ds = 6.0 v, v gs = 2.0 v drain-source breakdown voltage v bd 100 C C v v gs = -8 v, i d = 14.4 ma on resistance r on C 0.2 C ? v ds = 0.1 v, v gs = 0 v gate forward voltage v g-on C 1.85 C v i gs = 14.4 ma rf characteristics small signal gain g ss C 17 C db v dd = 40 v, i dq = 720 ma saturated power output 1 p sat C 70 C w v dd = 40 v, i dq = 720 ma drain effciency 2 C 60 C % v dd = 40 v, i dq = 720 ma intermodulation distortion im3 C -30 C dbc v dd = 40 v, i dq = 720 ma, p out = 70 w pep output mismatch stress vswr C C 10 : 1 y no damage at all phase angles, v dd = 40 v, i dq = 720 ma , p out = 70 w cw dynamic characteristics input capacitance c gs C 24.0 C pf v ds = 40 v, v gs = -8 v, f = 1 mhz output capacitance c ds C 4.2 C pf v ds = 40 v, v gs = -8 v, f = 1 mhz feedback capacitance c gd C 0.6 C pf v ds = 40 v, v gs = -8 v, f = 1 mhz notes: 1 scaled from pcm unit cell. 1 p sat is defned as i g = 1.44 ma. 2 drain effciency = p out / p dc CGHV1J070D rev 0.5 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2011-2014 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. other trademarks, product and company names are the property of their respective owners and do not imply specifc product and/or vendor endorsement, sponsorship or association.
3 die dimensions (units in microns) overall die size 800 x 4800 (+0/-50) microns, die thickness 100 (+/-10) microns. all gate and drain pads must be wire bonded for electrical connection. pad size (microns) drain 200 x 100 gate 200 x 100 interconnect 80 x 80 assembly notes: ? recommended solder is ausn (80/20) solder. refer to crees website for the eutectic die bond procedure application note at http://www.cree.com/products/wireless_documents.asp ? vacuum collet is the preferred method of pick-up. ? the backside of the die is the source (ground) contact. ? die back side gold plating is 5 microns thick minimum. ? thermosonic ball or wedge bonding are the preferred connection methods. ? gold wire must be used for connections. ? use the die label (xx-yy) for correct orientation. CGHV1J070D rev 0.5 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2011-2014 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. other trademarks, product and company names are the property of their respective owners and do not imply specifc product and/or vendor endorsement, sponsorship or association.
4 gmax and k factor figure 1. CGHV1J070D - stability with gmax and k factor v dd = 40 v, i ds = 360 ma figure 2. CGHV1J070D - stability with gmax and k factor v dd = 40 v, i ds = 720 ma g max (db) k factor g max (db) k factor CGHV1J070D g40v4 14.4 mm die; CGHV1J070D g40v4 14.4 mm die; vddvdd=40 volts,=40 volts, idqidq=360=360 mama CGHV1J070D g40v4 CGHV1J070D g40v4 14.4 mm die; 14.4 mm die; vddvdd=40 volts,=40 volts, idqidq=720=720 mama CGHV1J070D rev 0.5 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2011-2014 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. other trademarks, product and company names are the property of their respective owners and do not imply specifc product and/or vendor endorsement, sponsorship or association.
5 source and load impedances frequency (ghz) source impedance (ohms) load impedance (ohms) series gate stability resistor (ohms) 1.0 2.77 + j3.567 11 + j8.57 2.40 2.0 1.33 + j1.78 5.83 + j8.15 1.15 3.0 0.76 + j1.11 3.06 + j6.97 0.65 4.0 0.627 + j0.778 2.06 + j5.82 0.45 5.0 0.55 + j0.57 1.48 + j4.88 0.325 6.0 0.458 + j0.41 1.07 + j4.16 0.250 7.0 0.465 + j0.296 0.896 + j3.5 0.180 8.0 0.453 + j0.19 0.785 + j3.2 0.125 9.0 0.399 + j0.096 0.71 + j2.86 0.090 10.0 0.328 + j0.01 0.643 + j2.56 0.060 11.0 0.245 C j0.018 0.61 +j2.32 0.035 12.0 0.173 C j0.03 0.52 + j2.06 0.013 13.0 0.247 C j0.085 0.474 + j1.917 0 14.0 0.149 C j0.19 0.417 + j1.73 0 15.0 0.143 C j0.268 0.377 + j1.57 0 16.0 0.144 C j0.34 0.34 + j1.43 0 17.0 0.142 C j0.41 0.31 + j1.29 0 18.0 0.158 C j0.478 0.279 + j1.18 0 table 1. note: v dd = 40 v, i dq = 535 ma. figure 3. CGHV1J070D - power gain, output power and drain effciency using source and load pull impedances (series gate stability resistor values chosen to make k>1) 40 50 60 70 80 po w er gai n ( d b ) , ou t p u t po w er ( w ) , d r ai n ef f i ci en cy ( % ) power gain, db 0 10 20 30 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 po w er gai n ( d b ) , ou t p u t po w er ( w ) , d r ai n ef f i ci en cy ( % ) frequency (ghz) output power, watts drain efficiency, % CGHV1J070D rev 0.5 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2011-2014 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. other trademarks, product and company names are the property of their respective owners and do not imply specifc product and/or vendor endorsement, sponsorship or association.
6 typical s-parameters for CGHV1J070D (small signal, v ds = 40 v, i dq = 360 ma, angle in degrees) frequency mag s11 ang s11 mag s21 ang s21 mag s12 ang s12 mag s22 ang s22 500 mhz 0.944 -165.60 12.49 87.69 0.011 -1.78 0.603 -167.23 1.00 ghz 0.947 -172.19 6.08 75.58 0.010 -13.31 0.637 -166.40 1.50 ghz 0.952 -174.26 3.86 66.38 0.010 -21.95 0.680 -164.85 2.00 ghz 0.957 -175.28 2.72 58.56 0.009 -29.21 0.725 -164.11 2.50 ghz 0.962 -175.92 2.03 51.82 0.009 -35.39 0.766 -164.10 3.00 ghz 0.967 -176.39 1.57 45.99 0.008 -40.66 0.802 -164.56 3.50 ghz 0.971 -176.78 1.25 40.95 0.007 -45.14 0.832 -165.26 4.00 ghz 0.974 -177.11 1.02 36.56 0.007 -48.97 0.857 -166.06 4.50 ghz 0.977 -177.40 0.84 32.73 0.006 -52.24 0.877 -166.88 5.00 ghz 0.980 -177.67 0.70 29.35 0.006 -55.05 0.894 -167.69 5.50 ghz 0.982 -177.91 0.60 26.36 0.005 -57.47 0.908 -168.45 6.00 ghz 0.983 -178.12 0.52 23.69 0.005 -59.58 0.919 -169.16 6.50 ghz 0.985 -178.32 0.45 21.29 0.005 -61.41 0.928 -169.82 7.00 ghz 0.986 -178.51 0.39 19.11 0.004 -63.02 0.936 -170.42 7.50 ghz 0.987 -178.68 0.35 17.12 0.004 -64.43 0.943 -170.98 8.00 ghz 0.988 -178.84 0.31 15.29 0.004 -65.68 0.949 -171.49 8.50 ghz 0.989 -178.99 0.28 13.61 0.004 -66.79 0.953 -171.96 9.00 ghz 0.989 -179.13 0.25 12.04 0.003 -67.77 0.958 -172.40 9.50 ghz 0.990 -179.27 0.22 10.58 0.003 -68.65 0.961 -172.80 10.00 ghz 0.990 -179.40 0.20 9.21 0.003 -69.42 0.964 -173.18 10.50 ghz 0.991 -179.52 0.19 7.92 0.003 -70.12 0.967 -173.52 11.00 ghz 0.991 -179.63 0.17 6.70 0.003 -70.74 0.970 -173.85 11.50 ghz 0.991 -179.75 0.16 5.55 0.003 -71.29 0.972 -174.15 12.00 ghz 0.992 -179.85 0.15 4.45 0.003 -71.77 0.974 -174.43 12.50 ghz 0.992 -179.96 0.14 3.40 0.002 -72.20 0.975 -174.70 13.00 ghz 0.992 179.94 0.13 2.39 0.002 -72.58 0.977 -174.95 13.50 ghz 0.992 179.84 0.12 1.43 0.002 -72.91 0.978 -175.19 14.00 ghz 0.992 179.75 0.11 0.50 0.002 -73.20 0.979 -175.41 14.50 ghz 0.993 179.65 0.10 -0.39 0.002 -73.43 0.980 -175.62 15.00 ghz 0.993 179.56 0.10 -1.26 0.002 -73.63 0.981 -175.82 15.25 ghz 0.993 179.52 0.09 -1.68 0.002 -73.71 0.982 -175.92 15.50 ghz 0.993 179.47 0.09 -2.09 0.002 -73.79 0.982 -176.01 15.75 ghz 0.993 179.43 0.09 -2.50 0.002 -73.85 0.983 -176.11 16.00 ghz 0.993 179.39 0.09 -2.90 0.002 -73.90 0.983 -176.20 16.25 ghz 0.993 179.34 0.08 -3.30 0.002 -73.95 0.983 -176.28 16.50 ghz 0.993 179.30 0.08 -3.69 0.002 -73.98 0.984 -176.37 16.75 ghz 0.993 179.26 0.08 -4.07 0.002 -74.00 0.984 -176.45 17.00 ghz 0.993 179.21 0.08 -4.45 0.002 -74.02 0.985 -176.54 17.25 ghz 0.993 179.17 0.07 -4.82 0.002 -74.02 0.985 -176.62 17.50 ghz 0.993 179.13 0.07 -5.19 0.001 -74.01 0.985 -176.70 17.75 ghz 0.993 179.09 0.07 -5.56 0.001 -73.99 0.985 -176.77 18.00 ghz 0.993 179.05 0.07 -5.92 0.001 -73.97 0.986 -176.85 to download the s-parameters in s2p format, go to the CGHV1J070D product page and click on the documentation tab. CGHV1J070D rev 0.5 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2011-2014 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. other trademarks, product and company names are the property of their respective owners and do not imply specifc product and/or vendor endorsement, sponsorship or association.
7 typical s-parameters for CGHV1J070D (small signal, v ds = 40 v, i dq = 720 ma, angle in degrees) frequency mag s11 ang s11 mag s21 ang s21 mag s12 ang s12 mag s22 ang s22 500 mhz 0.956 -167.23 12.34 87.98 0.008 -1.48 0.639 -170.66 1.00 ghz 0.958 -173.22 6.04 77.07 0.008 -11.78 0.664 -169.66 1.50 ghz 0.961 -175.13 3.87 68.67 0.008 -19.59 0.696 -168.00 2.00 ghz 0.964 -176.05 2.76 61.38 0.007 -26.29 0.731 -166.94 2.50 ghz 0.968 -176.62 2.08 54.97 0.007 -32.11 0.766 -166.50 3.00 ghz 0.971 -177.03 1.63 49.32 0.007 -37.17 0.797 -166.52 3.50 ghz 0.974 -177.36 1.31 44.34 0.006 -41.56 0.825 -166.85 4.00 ghz 0.977 -177.64 1.07 39.94 0.006 -45.36 0.848 -167.34 4.50 ghz 0.979 -177.89 0.89 36.05 0.005 -48.66 0.868 -167.91 5.00 ghz 0.981 -178.11 0.75 32.60 0.005 -51.52 0.885 -168.52 5.50 ghz 0.983 -178.31 0.64 29.50 0.005 -54.01 0.899 -169.13 6.00 ghz 0.984 -178.50 0.55 26.72 0.004 -56.19 0.910 -169.72 6.50 ghz 0.986 -178.67 0.48 24.21 0.004 -58.10 0.920 -170.28 7.00 ghz 0.987 -178.83 0.42 21.92 0.004 -59.77 0.929 -170.81 7.50 ghz 0.987 -178.98 0.38 19.83 0.004 -61.25 0.936 -171.30 8.00 ghz 0.988 -179.12 0.34 17.91 0.003 -62.56 0.942 -171.76 8.50 ghz 0.989 -179.26 0.30 16.13 0.003 -63.71 0.948 -172.19 9.00 ghz 0.990 -179.38 0.27 14.48 0.003 -64.74 0.952 -172.60 9.50 ghz 0.990 -179.51 0.25 12.93 0.003 -65.64 0.956 -172.97 10.00 ghz 0.990 -179.62 0.22 11.49 0.003 -66.45 0.960 -173.32 10.50 ghz 0.991 -179.73 0.20 10.13 0.003 -67.16 0.963 -173.65 11.00 ghz 0.991 -179.84 0.19 8.84 0.002 -67.79 0.965 -173.96 11.50 ghz 0.991 -179.94 0.17 7.62 0.002 -68.34 0.968 -174.25 12.00 ghz 0.992 179.96 0.16 6.46 0.002 -68.82 0.970 -174.52 12.50 ghz 0.992 179.86 0.15 5.36 0.002 -69.23 0.972 -174.77 13.00 ghz 0.992 179.77 0.14 4.30 0.002 -69.58 0.974 -175.02 13.50 ghz 0.992 179.67 0.13 3.29 0.002 -69.88 0.975 -175.25 14.00 ghz 0.993 179.58 0.12 2.32 0.002 -70.12 0.976 -175.46 14.50 ghz 0.993 179.50 0.11 1.38 0.002 -70.30 0.978 -175.67 15.00 ghz 0.993 179.41 0.11 0.48 0.002 -70.44 0.979 -175.86 15.25 ghz 0.993 179.37 0.10 0.03 0.002 -70.48 0.979 -175.96 15.50 ghz 0.993 179.32 0.10 -0.40 0.002 -70.52 0.980 -176.05 15.75 ghz 0.993 179.28 0.10 -0.82 0.001 -70.54 0.980 -176.14 16.00 ghz 0.993 179.24 0.09 -1.24 0.001 -70.54 0.981 -176.23 16.25 ghz 0.993 179.20 0.09 -1.66 0.001 -70.53 0.981 -176.32 16.50 ghz 0.993 179.16 0.09 -2.06 0.001 -70.51 0.982 -176.40 16.75 ghz 0.993 179.12 0.09 -2.46 0.001 -70.48 0.982 -176.48 17.00 ghz 0.993 179.08 0.08 -2.86 0.001 -70.43 0.983 -176.56 17.25 ghz 0.993 179.04 0.08 -3.25 0.001 -70.37 0.983 -176.64 17.50 ghz 0.993 179.00 0.08 -3.63 0.001 -70.29 0.983 -176.72 17.75 ghz 0.993 178.96 0.08 -4.01 0.001 -70.20 0.984 -176.80 18.00 ghz 0.993 178.92 0.08 -4.39 0.001 -70.09 0.984 -176.87 to download the s-parameters in s2p format, go to the CGHV1J070D product page and click on the documentation tab. CGHV1J070D rev 0.5 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2011-2014 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. other trademarks, product and company names are the property of their respective owners and do not imply specifc product and/or vendor endorsement, sponsorship or association.
8 part number system parameter value units lower frequency dc ghz upper frequency 1 18.0 ghz power output 70 w package bare die - table 1. note 1 : alpha characters used in frequency code indicate a value greater than 9.9 ghz. see table 2 for value. character code code value a 0 b 1 c 2 d 3 e 4 f 5 g 6 h 7 j 8 k 9 examples: 1a = 10.0 ghz 2h = 27.0 ghz table 2. package power output (w) upper frequency (ghz) cree gan high voltage hemt product line CGHV1J070D CGHV1J070D rev 0.5 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2011-2014 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. other trademarks, product and company names are the property of their respective owners and do not imply specifc product and/or vendor endorsement, sponsorship or association.
9 disclaimer specifcations are subject to change without notice. cree, inc. believes the information contained within this data sheet to be accurate and reliable. however, no responsibility is assumed by cree for its use or for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of cree. cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. typical parameters are the average values expected by cree in large quantities and are provided for information purposes only. these values can and do vary in different applications, and actual performance can vary over time. all operating parameters should be validated by customers technical experts for each application. cree products are not designed, intended, or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the cree product could result in personal injury or death, or in applications for the planning, construction, maintenance or direct operation of a nuclear facility. cree and the cree logo are registered trademarks of cree, inc. for more information, please contact: cree, inc. 4600 silicon drive durham, north carolina, usa 27703 www.cree.com/wireless sarah miller marketing cree, rf components 1.919.407.5302 ryan baker cree, marketing, rf components 1.919.407.7816 tom dekker cree, sales director, rf components 1.919.313.5639 CGHV1J070D rev 0.5 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2011-2014 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. other trademarks, product and company names are the property of their respective owners and do not imply specifc product and/or vendor endorsement, sponsorship or association.


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